The Radio-Frequency Gallium Nitride Market (RF GaN Market) was valued at USD 406.2 million in 2017, and it is expected to reach USD 1,075 million by 2023, at a CAGR of 17.5%, during the forecast period (2018 – 2023). The report is segment by Material (GaN-on-Sic and GaN-on-Silicon), Application (Wireless Infrastructure and Aerospace and Defense), and Region.
RF GaN (Radio-frequency Gallium Nitride) Market Precise Outlook 2020-2026 is complete guide for the new entrants in the industry; the report provides the market history of every product ever retailed by the company. It also provides history of the product types, sales, volume, technology, during the forecast period. The growth rate challenges and barriers are also explained in the RF GaN (Radio-frequency Gallium Nitride) Market research report. The report shades light on the development rate of the strategies. Products and technologies used in the production, manufacturing and marketing of the report.
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The prominent players in the global RF GaN (Radio-frequency Gallium Nitride) market are:
Nxp Semiconductors Nv, Analog Devices Inc., Rfhic Corporation, Mitsubishi Electric Corporation, Aethercomm Inc., Microsemi Corporation, Cree Inc., Stmicroelectronics Nv, Toshiba Corporation, M/A-Com Technology Solutions Holdings Inc., Qorvo Inc., And Aethercomm Inc
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Global RF GaN (Radio-frequency Gallium Nitride) Market: Research Methodology
Increasing adoption of electric vehicles and transition toward 5G are the primary factors driving the growth of the global RF GaN market. The RF GaN market is also expected to experience a significant growth, over the forecast period, due to the increasing demand for power electronics that consume less power and are energy efficient. GaN possess dynamic electrical and chemical properties, such as high-voltage breakdown and saturation velocity, which makes them the apt choice for use in a variety of switching devices. However, issues related to the high cost of raw materials and production processes are expected to challenge the growth of the RF GaN market.
The Aerospace and Defense Sector to Offer Many Growth Opportunities
Modernization of defense equipment has created the need for high-power semiconductor devices, such as GaN RF devices. ICs used in radar boards incorporate GaN that enables efficient navigation, facilitate collision avoidance, and enable real-time air traffic control.
The RF power amplifiers used in the radar systems are low on power and performance. The bandwidth performance and efficiency of GaN-based RF power amplifiers are higher than that of silicon-based RF power amplifiers. As GaN is more powerful than Si, GaN-based RF amplifiers used in the radars deliver higher performance, in terms of power and radar range. This reduces the number of radar systems required to monitor the same perimeter, thereby cutting the cost. Thus, the demand for GaN RF devices is expected to increase in the defense sector, during the forecast period.
Furthermore, Global RF GaN (Radio-frequency Gallium Nitride) Market following points are involved along with a detailed study of each point: –
– Global RF GaN (Radio-frequency Gallium Nitride) Market Overview, Drivers, Restraints and Opportunities, Segmentation overview
– Global RF GaN (Radio-frequency Gallium Nitride) Market competition by Manufacturers (2020-2026)
– Production and Consumption by Regions
– Complete profiling and analysis of Manufacturers (2020-2026)
– Manufacturing cost analysis, Materials analysis, Region-wise manufacturing expenses
– Industrial Chain, Sourcing Strategy and Downstream Buyers
– Marketing Strategy Analysis, Distributors/Traders
– Global RF GaN (Radio-frequency Gallium Nitride) Market Effect Factors Analysis (2020-2026)
– Global RF GaN (Radio-frequency Gallium Nitride) Market Forecast (2020-2026)
– Global RF GaN (Radio-frequency Gallium Nitride) Market Research Findings and Conclusion
In addition, this report discusses the key drivers influencing market growth, opportunities, the challenges and the risks faced by key players and the market as a whole. It also analyses key emerging trends and their impact on present and future development.
Key Developments in the Market
-Jun 2018: NXP Semiconductors NV launched new RF GaN wideband power transistors and expanded its Airfast third-generation Si-LDMOS portfolio of macro- and outdoor small-cell solutions to enable next-generation 5G mobile networks.
-Mar 2018: Cree Inc. acquired the assets of Infineon Technologies AG RF Power Business for approximately EUR 345 million. This acquisition has strengthened company’s leadership position in RF GaN-on-SiC technologies. This also provides access to additional markets and customers and enhances packaging expertise.
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